收藏本站
Ordering number : ENA1689A
BFL4007
N-Channel Power MOSFET
600V, 14A, 0.68 Ω , TO-220F-3FS
Features
http://onsemi.com
?
?
Reverse recovery time trr=95ns (typ.)
Input capacitance Ciss=1200pF (typ.)
?
?
ON-resistance RDS(on)=0.52 Ω (typ.)
10V drive
Speci ? cations
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain to Source Voltage
Gate to Source Voltage
Symbol
VDSS
VGSS
Conditions
Ratings
600
±30
Unit
V
V
Drain Current (DC)
Drain Current (Pulse)
Source to Drain Diode Forward Current (DC)
Source to Drain Diode Forward Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Energy (Single Pulse) *4
Avalanche Current *5
IDc*1
IDpack*2
IDP
IS
ISP
PD
Tch
Tstg
EAS
IAV
Limited only by maximum temperature Tch=150 ° C
Tc=25 ° C (Our ideal heat dissipation condition)*3
PW ≤ 10 μ s, duty cycle ≤ 1%
PW ≤ 10 μ s, duty cycle ≤ 1%
Tc=25 ° C (Our ideal heat dissipation condition)*3
14
8.7
49
14
49
2.0
40
150
--55 to +150
196
8.5
A
A
A
A
A
W
W
° C
° C
mJ
A
Note : * 1 Shows chip capability
* 2 Package limited
* 3 Our condition is radiation from backside.
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.
* 4 VDD=50V, L=5mH, IAV=8.5A (Fig.1)
* 5 L ≤ 5mH, single pulse
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
Ordering & Package Information
Device Package Shipping
memo
7528-001
BFL4007-1E
TO-220F-3FS
SC-67
50
pcs./tube
Pb-Free
3.18
10.16
4.7
2.54
BFL4007-1E
Marking
Electrical Connection
2
1.47 MAX
0.8
2.76
FL4007
LOT No.
1
3
1
2
3
0.5
1 : Gate
2 : Drain
3 : Source
2.54
2.54
TO-220F-3FS
Semiconductor Components Industries, LLC, 2013
June, 2013
61913 TKIM TC-00002923/60210QB TKIM TC-00002337 No. A1689-1/6
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
BFL4026 MOSFET N-CH 900V 3.5A TO-220FI
BFL4036 MOSFET N-CH 500V 9.6A TO-220FI
BFL4037 MOSFET N-CH 500V 11A TO-220FI
BGF717-UV1 LAMP UB MINI HOT CATHODE
BH1600FVC-TR IC AMBIENT LIGHT SENSOR WSOF6
BH1621FVC-TR IC AMBIENT LIGHT SENSOR 5WSOF
BH1715FVC-TR IC AMBIENT LIGHT SENSOR 6-WSOF
BH1750FVI-TR IC AMBIENT LIGHT SENSOR WSOF6
相关代理商/技术参数
BFL4007-1E 制造商:ON Semiconductor 功能描述:NCH 10V DRIVE SERIES - Ammo Pack 制造商:ON Semiconductor 功能描述:FNFLD / NCH 10V DRIVE SERIES
BFL4026 功能描述:MOSFET POWER MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
BFL4026_12 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications
BFL4026-1E 功能描述:MOSFET NCH 10V DRIVE SERIES RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
BFL4036 功能描述:MOSFET NCH 10V DRIVE SERIES RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
BFL4036-1E 制造商:ON Semiconductor 功能描述:NCH 10V DRIVE SERIES - Ammo Pack
BFL4037 功能描述:MOSFET POWER MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
BFL4037-1E 制造商:ON Semiconductor 功能描述:NCH 10V DRIVE SERIES - Ammo Pack